dsc curve meaning in Chinese
差示扫描量热曲线
Examples
- The dsc curve and xrd of vo xerogel revealed that three - change process during the drying process of xos sol
其xrd和tga图谱显示，在相同温度下热处理，样品a在001面有序化程度比样品b低。 - Research of infrared spectrum and dsc curve indicate that there is no chemical bond between fe3o4 and pvdf . fe3o4 particles exist in the form of metal oxide particles . however , there is some force between fe3o4 and fluorine atom
红外光谱和差示扫描量热分析结果则表明， fe3o4与pvdf基膜间无化学键，是以纯金属氧化物晶粒存在于膜孔中和膜表面，但其与f原子间有一定的作用力。 - 3 . based on the gel time and dsc curve figure of two kinds of modified phenolic resin and flory and kissinger theory , the rage of cure process parameters for the resin system , moulding pressure and resin content are established
3 、通过对二种改性酚醛树脂体系凝胶时间、 dsc曲线图的分析，引入flory理论、 kissinger理论，确定了树脂体系的固化工艺参数(固化温度、固化时间、后处理温度)范围；并初步确定了成型压力和树脂含量的范围。 - The enthalpy change on dsc curve suggests that the transition is one from low - ordered state to a higher - ordered state . a stacking mood that the 4 - trifluoro - methyl - 2 , 3 , 5 , 6 - tetrafluorophenylmserts in between two perylene - macrocycles is confirmed by theoretical quantum calculation , such an insertion effect leads to the inversion of ( 0 , 0 ) and ( 0 , 1 ) absorption features under low temperature and the dramatic decrease of exciton coupling , which contributes to the spectral similarity in solution and the solid state
量子化学的计算结果支持氟取代的苯环嵌入两个相邻的?环之间的分子堆砌方式，使得在常温到150左右f - ptcdi固体薄膜的紫外-可见吸收光谱的( 0 ， 0 )和( 0 ， 1 )性状的强度对比发生“反转” ；氟取代苯环的嵌入大大降低激子耦合，使固体吸收光谱性状与溶液类似。 - In succession , tini thin film is deposited on single - crystal silicon substrate using optimized parameters utilizing sputtering , and its transformation temperature ( a * ) is 72 ? indicated by dsc curve after being annealed in an ultra - high vacuum ( uhv ) chamber . in addition , the composition of the silicon - based tini film was analyzed by an energy dispersive x - ray spectroscopy ( eds ) , and the ti content in the film is approximately 51at %
按照改进的工艺参数，在单晶硅衬底上溅射-淀积了tini薄膜，并进行了超高真空退火， dsc法测得其马氏体逆相变峰值温度为72 ，利用能谱分析( eds )技术测得其ti含量约为51at ，通过对非晶tini薄膜与单晶硅衬底之间的界面进行eds及x射线衍射( xrd )分析，发现在用大功率( 2000w )直流磁控溅射法制备tini薄膜过程中，存在ti 、 ni与si的双向扩散，发生了界面反应，并有三元化合物ni _ 3ti _ 2si生成。